BSS84PW

Overview

The BSS84PW is a P-Channel SIPMOS small-signal transistor in the PG-SOT-323 L6327 package. It features a drain-source voltage (VDS) of -60 V and a continuous drain current (ID) of -0.15 A at 25 °C. The device has a maximum pulsed drain current (ID puls) of -0.6 A and power dissipation (Ptot) of 0.3 W. Key electrical parameters include a gate threshold voltage (VGS(th)) range of -1 V to -2 V, an on-state resistance (RDS(on)) of 8 Ω at VGS = -10 V, and a total gate charge (Qg) of 1 nC. Thermal characteristics specify a junction-to-soldering point thermal resistance (RthJS) of 110 K/W and a junction-to-ambient resistance (RthJA) of 420 K/W. Operating temperature ranges from -55 °C to +150 °C.

Feature Summary

• Enhancement mode P-Channel logic level MOSFET
• Rated for avalanche energy and dv/dt switching
• Qualified according to AEC-Q101 standards

Applications

• Small signal amplification
• Logic level switching applications
• Low voltage drive circuits

Procurement Notes

Verify component authenticity by checking the marking code 'YBs' against official Infineon documentation. Confirm the specific ordering suffix matches the required tape and reel quantity of 3000 pieces per reel. Ensure compliance with halogen-free requirements as defined by IEC61249-2-21 before final procurement integration.

Selection Notes

Select this component for low-power P-Channel switching tasks requiring high breakdown voltage relative to its small-signal classification. Consider the 8 Ω RDS(on) at -10 V gate drive when designing for minimal conduction loss. Evaluate the 420 K/W thermal resistance for PCB layout constraints, as heat dissipation relies heavily on copper area and ambient conditions.

Part Context

This part belongs to Infineon's SIPMOS small-signal transistor family, designed for general-purpose switching and amplification. It utilizes advanced planar technology to achieve robust performance within the compact SOT-323 footprint. The product line emphasizes reliability through automotive qualification standards and specialized ratings for transient handling.

Replacement Considerations

Cross-reference with other P-Channel MOSFETs in the -60 V / -0.15 A class. Verify pinout compatibility (Gate, Source, Drain) and package dimensions (PG-SOT-323). Check if alternative parts meet the same AEC-Q101 qualification and avalanche rating requirements.

FAQ

What is the maximum single-pulse avalanche energy?

The maximum single-pulse avalanche energy (EAS) is 2.61 mJ under conditions of ID = -0.15 A, VDD = -25 V, and RGS = 25 Ω.

How does the reverse diode perform regarding dv/dt?

The reverse diode is rated for a dv/dt of 6 kV/μs when IS = -0.15 A, VDS = -48 V, and di/dt = 200 A/μs at Tjmax = 150 °C.