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Product Detailed Parameters
- Description：MOSFET P-CH 60V 150MA SOT323-3
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：150mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：8Ohm @ 150mA, 10V
- Vgs(th) (Max) @ Id：2V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs：1.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：19.1 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：300mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT323
- Package / Case：SC-70, SOT-323
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Overview
The BSS84PWH6327XTSA1 is a single-channel P-Channel enhancement mode MOSFET manufactured by Infineon Technologies using silicon technology. It is housed in an SOT-323-3 surface-mount package and supports operation from -55°C to +150°C. Key electrical specifications include a drain-source breakdown voltage of 60V, a continuous drain current of 150mA, and a maximum gate-source voltage of ±20V. The device exhibits a typical on-resistance of 4.6 Ohms, a gate charge of 1.5 nC, and a threshold voltage of 2V. Power dissipation is rated at 300mW, with rise and fall times of 16.2 ns and 20.5 ns respectively.
Feature Summary
- Single-channel P-Channel configuration for compact circuit integration
- Automotive-grade reliability certified under AEC-Q100 standards
- Silicon-based construction optimized for low-power switching applications
Applications
- Automotive electronic systems requiring qualified small-signal components
- Low-current load switching circuits
- General-purpose signal control in consumer electronics
Procurement Notes
Verify the specific suffix against official Infineon documentation to confirm exact tape-and-reel specifications and packaging details. Ensure the component meets required automotive qualification standards if deployed in vehicle systems. Cross-reference the datasheet for precise thermal management requirements given the 300mW power dissipation limit in the SOT-323-3 package.
Selection Notes
Select this component when a single P-Channel switch with 60V capability and 150mA current rating is needed in a minimal footprint. The AEC-Q100 certification makes it suitable for automotive environments where standard commercial parts may not suffice. Consider the 4.6 Ohm on-resistance for efficiency calculations in low-current paths.
Part Context
This part belongs to Infineon's portfolio of small-signal MOSFETs designed for space-constrained applications. The BSS84 series typically offers robust performance in portable devices and automotive modules. The WH6327 suffix indicates specific manufacturing and packaging attributes defined by Infineon for supply chain consistency.
Replacement Considerations
Consult official Infineon substitution guides for verified equivalents. Do not assume pin-compatible alternatives without verifying electrical parameters and package dimensions.
