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Product Detailed Parameters
- Description：-60, -0.14, SINGLE P-CHANNEL
- Series：-
- Mfr：Taiwan Semiconductor Corporation
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：140mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：8Ohm @ 140mA, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.9 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：37 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：298mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
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Overview
The BSS84W RFG is a P-Channel Power MOSFET manufactured by Taiwan Semiconductor Corporation. It features a -60V drain-source voltage and an 8Ω maximum on-resistance at VGS=-10V. The device operates in the SOT-323 package with a total power dissipation of 298mW at 25°C. Key electrical parameters include a gate threshold voltage ranging from -0.9V to -2.0V, a continuous drain current of -140mA, and a total gate charge of 1nC at VGS=-4.5V. The component supports an operating junction temperature range from -55°C to +150°C.
Feature Summary
- Logic level operation for direct interface with standard logic circuits
- Low gate charge characteristics enabling fast power switching performance
- RoHS compliant manufacturing process ensuring environmental safety standards
Applications
- Low side load switching
- Level shift circuits
- General switch circuits
Procurement Notes
Verify the specific ordering code BSS84W RFG against official Taiwan Semiconductor documentation to confirm the SOT-323 package and reel packing quantity. Ensure that the application environment remains within the specified thermal limits and absolute maximum ratings defined in the datasheet. Confirm compliance requirements such as RoHS and halogen-free status prior to final procurement decisions.
Selection Notes
Select this component when a P-Channel MOSFET with low on-resistance and logic-level drive capability is required. The SOT-323 package suits space-constrained designs. Evaluate the thermal resistance and power dissipation capabilities relative to the expected load current and ambient temperature conditions to ensure reliable operation within the safe operating area.
Part Context
This part belongs to the BSS84W series of P-Channel Power MOSFETs produced by Taiwan Semiconductor. The 'RFG' suffix indicates the specific packaging configuration, which utilizes a 7-inch reel format containing 3,000 pieces per unit. The device is designed for general-purpose switching applications requiring efficient power management in compact surface-mount layouts.
Replacement Considerations
Cross-reference with other BSS84W variants from different manufacturers if supply constraints exist. Verify pinout compatibility, specifically Gate, Source, and Drain configurations in the SOT-323 package. Ensure replacement devices meet or exceed the -60V breakdown voltage and current handling specifications.
