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The BSS84WQ-7-F is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 50 V and a continuous drain current of 130 mA at 25°C. The device exhibits a typical on-resistance of 10 Ohms at 5V gate drive and a gate threshold voltage of 2V. It operates within a temperature range of -55°C to +150°C junction temperature, with a power dissipation rating of 200 mW. The component is housed in an SOT-323 surface-mount package and meets AEC-Q101 automotive qualification standards.
Verify the specific suffix 'Q' against the manufacturer's official datasheet to confirm AEC-Q101 automotive qualification status. Ensure the ordering part number matches the required package variant and tape-and-reel specifications. Cross-reference the manufacturer's latest revision history to validate component parameters before final procurement decisions.
Select this component for designs requiring a compact P-channel switch with automotive reliability standards. The SOT-323 package suits space-constrained PCB layouts. Verify that the 130 mA current rating and 200 mW power dissipation meet the thermal requirements of the target application environment.
This part belongs to the BSS84 series of P-channel MOSFETs from Diodes Incorporated. The series offers various package options including SOT-23 and SOT-363. The BSS84WQ-7-F specifically utilizes the SOT-323 footprint and includes the Q suffix indicating automotive grade qualification, distinguishing it from standard commercial variants.
Compatible alternatives include the BSS84-7-F and BSS84W-7-F. Verify pinout compatibility and electrical parameter alignment when substituting.