BSS87,115

$0.43

Description：MOSFET N-CH 200V 400MA SOT89
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:cffa0fe4e8b4 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 200V 400MA SOT89
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：3Ohm @ 400mA, 10V
Vgs(th) (Max) @ Id：2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：120 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：580mW (Ta), 12.5W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-89
Package / Case：TO-243AA

Download product information

BSS87,115

Overview

The BSS87,115 is an N-channel enhancement-mode vertical double-diffused MOSFET manufactured by Nexperia. It is housed in a SOT-89 surface-mount plastic package designed for medium power applications. The device features a maximum drain-source voltage of 200 V and a continuous drain current of 400 mA at ambient temperature. Thermal performance includes a dissipation rating of 580 mW at Ta and 12.5 W at case temperature.

Feature Summary

N-channel enhancement-mode vertical double-diffused field-effect transistor structure
Medium power flat lead surface-mount plastic package design
High voltage capability suitable for switching applications

Applications

General purpose switching circuits
Power management modules
Automotive electronics systems

Procurement Notes

Verify the exact part number suffix to ensure correct packaging configuration. Confirm that the SOT-89 footprint matches your PCB layout requirements. Check datasheet specifications for thermal resistance values relevant to your specific mounting conditions. Ensure compatibility with your system's voltage and current limits before finalizing procurement.

Selection Notes

Select this component when a robust N-channel MOSFET with 200 V blocking capability is required in a compact SOT-89 package. Consider the 400 mA current rating against your load requirements. Evaluate thermal management needs based on the 580 mW ambient dissipation limit. Verify that the enhancement-mode characteristics align with your gate drive logic levels.

Part Context

This component belongs to Nexperia's single FET and MOSFET product family. It represents a standard discrete semiconductor solution for power switching tasks. The SOT-89 package provides a balance between power handling capacity and board space efficiency for consumer and industrial designs.

Replacement Considerations

Direct substitutes may include other N-channel MOSFETs with similar 200 V ratings and SOT-89 packages. Verify pinout compatibility and electrical parameters such as Rds(on) and threshold voltage before substitution.