ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 240V 260MA SOT89-4
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：240 V
- Current - Continuous Drain (Id) @ 25°C：260mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6Ohm @ 260mA, 10V
- Vgs(th) (Max) @ Id：1.8V @ 108µA
- Gate Charge (Qg) (Max) @ Vgs：5.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：97 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT89-4-2
- Package / Case：TO-243AA
Download product information
Overview
The BSS87H6327FTSA1 is a single N-channel enhancement mode MOSFET manufactured by Infineon Technologies using silicon technology. It features a SOT-89-3 surface-mount package and supports a drain-source voltage of 240 V with a continuous drain current of 260 mA at 25°C. The device exhibits a maximum on-resistance of 3.9 Ohms, a gate threshold voltage of 1.2 V, and a total gate charge of 3.7 nC. It operates within a temperature range of -55°C to +150°C junction temperature, dissipating up to 1 W of power. The component holds AEC-Q101 qualification for automotive applications.
Feature Summary
- AEC-Q101 qualified for automotive reliability standards
- High breakdown voltage capability suitable for high-side switching
- Enhancement mode operation with low gate charge for efficient driving
Applications
- Automotive load switching circuits
- High-voltage signal path control
- General-purpose power management in automotive electronics
Procurement Notes
Verify the specific suffix FTSA1 against official Infineon documentation to confirm tape and reel specifications. Ensure the ordering part number matches the required packaging format. Confirm RoHS compliance status through the manufacturer's latest datasheet or environmental declaration. Cross-reference the AEC-Q101 qualification requirements with your system's automotive grade specifications before finalizing procurement.
Selection Notes
Select this component when a high-voltage N-channel switch is required in a compact SOT-89-3 package. The 240 V rating distinguishes it from standard low-voltage logic-level MOSFETs. Consider the 3.9 Ohm on-resistance for thermal management in low-current applications. Verify that the 260 mA current limit meets the load requirements. The AEC-Q101 qualification makes it suitable for automotive environments where higher voltage isolation is necessary.
Part Context
This part belongs to the BSS87 series of N-channel MOSFETs from Infineon Technologies. The series includes variants with different packages and electrical characteristics. The H6327 suffix typically denotes specific packaging and handling codes. The FTSA1 suffix indicates the specific tape and reel configuration. This component serves as a discrete semiconductor solution for power switching applications requiring high voltage tolerance in small form factors.
Replacement Considerations
The BSS87E6433 is listed as a parameter equivalent but is discontinued. Verify pinout compatibility and electrical parameters against the current datasheet before substitution. No other direct public substitutes are confirmed in the provided data.
