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Product Detailed Parameters
- Description：MOSFET N-CH 240V 260MA SOT89-4
- Series：SIPMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：240 V
- Current - Continuous Drain (Id) @ 25°C：260mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6Ohm @ 260mA, 10V
- Vgs(th) (Max) @ Id：1.8V @ 108µA
- Gate Charge (Qg) (Max) @ Vgs：5.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：97 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT89-4-2
- Package / Case：TO-243AA
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Overview
The BSS87H6327XTSA1 is a single N-channel enhancement mode MOSFET manufactured by Infineon Technologies. It utilizes silicon technology and is housed in an SOT-89-3 surface-mount package. The device features a drain-source breakdown voltage of 240 V and a continuous drain current of 260 mA at 25°C. Key electrical parameters include a maximum on-resistance of 3.9 Ohms, a gate-source voltage range of ±20 V, and a threshold voltage of 1.2 V. The component supports a power dissipation of 1 W, operates within a temperature range of -55°C to +150°C, and holds AEC-Q101 automotive qualification.
Feature Summary
- Automotive-grade reliability certified under the AEC-Q101 standard for robust performance in vehicle electronics.
- High-voltage capability with a 240 V drain-source breakdown voltage suitable for demanding switching applications.
- Compact SOT-89-3 surface-mount packaging designed for efficient space utilization in dense circuit layouts.
Applications
- Automotive electronic systems requiring high-voltage switching components
- General-purpose power management circuits
- Industrial control equipment utilizing single-channel MOSFETs
Procurement Notes
Verify the complete part number including the H6327 suffix to ensure correct packaging and automotive qualification status. Confirm that the SOT-89-3 package dimensions align with the target PCB footprint. Cross-reference the specific datasheet revision to validate thermal characteristics and absolute maximum ratings before finalizing procurement specifications.
Selection Notes
Select this component when a single N-channel MOSFET with high voltage tolerance is required for automotive or industrial environments. The 240 V rating distinguishes it from lower-voltage general-purpose alternatives. Ensure the application can accommodate the 3.9 Ohm on-resistance and 260 mA current limit within the specified thermal constraints of the SOT-89-3 package.
Part Context
This part belongs to the BSS87 series of N-channel MOSFETs from Infineon Technologies. The series is characterized by high-voltage capabilities and automotive certification. The H6327 designation typically indicates specific packaging and handling attributes consistent with Infineon's standard product coding for surface-mount devices intended for automated assembly processes.
Replacement Considerations
Direct substitutes must match the N-channel configuration, 240 V minimum breakdown voltage, and SOT-89-3 package. Verify that any alternative component meets the same AEC-Q101 qualification requirements and maintains comparable on-resistance and current handling capabilities for equivalent circuit performance.
