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Product Detailed Parameters
- Description：MOSFET N-CH 100V 190MA TO236AB
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：190mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：10Ohm @ 150mA, 5V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：40 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：830mW (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-236AB
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
BST82,235 is a single N-channel enhancement mode MOSFET manufactured by Nexperia. It utilizes silicon technology and is housed in an SOT-23 (TO-236AB) surface-mount package. The device features a drain-source breakdown voltage of 100 V and a continuous drain current rating of 190 mA. Its gate-source voltage range spans from -20 V to +20 V, with a threshold voltage of 1 V. The component operates within a temperature range of -65 °C to +150 °C and has a power dissipation capacity of 830 mW.
Feature Summary
- Single N-channel enhancement mode MOSFET configuration
- High voltage capability with 100 V drain-source breakdown
- Extended operating temperature range up to 150 °C
- Small form factor SOT-23 surface-mount packaging
Applications
- General purpose switching applications
- Load control circuits
- Power management systems requiring high voltage isolation
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status and REACH SVHC declarations via the manufacturer's restricted substances declaration. Ensure the part number matches the exact electrical characteristics required for the design, as variations may exist within the product family.
Selection Notes
Select this component when a single N-channel MOSFET with 100 V blocking capability is required in a compact SOT-23 footprint. Consider the 190 mA continuous current limit and 830 mW power dissipation for thermal management. Verify that the gate threshold voltage aligns with the driving logic levels. Compare against alternative Nexperia devices if higher current or different voltage ratings are needed.
Part Context
The BST82 belongs to Nexperia's portfolio of single N-channel MOSFETs designed for general-purpose switching. These devices are characterized by their small plastic surface-mount packages and robust avalanche ruggedness. The BST82 specifically targets applications requiring moderate voltage handling in space-constrained environments, leveraging standard silicon planar technology for reliable performance.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult Nexperia's official replacement guides or distributor cross-reference tools for verified alternatives.
