BSZ009NE2LS5ATMA1

BSZ009NE2LS5ATMA1

$1.49
  • Description:MOSFET N-CH 25V 39A/40A TSDSON
  • Series:OptiMOS™ 5
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:2e2f8d29be7f Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 25V 39A/40A TSDSON
  • Series:OptiMOS™ 5
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):25 V
  • Current - Continuous Drain (Id) @ 25°C:39A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:900mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:124 nC @ 10 V
  • Vgs (Max):±16V
  • Input Capacitance (Ciss) (Max) @ Vds:5500 pF @ 12 V
  • FET Feature:-
  • Power Dissipation (Max):2.1W (Ta), 69W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-TSDSON-8-34
  • Package / Case:8-PowerVDFN

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BSZ009NE2LS5ATMA1

Overview

The BSZ009NE2LS5ATMA1 is an N-channel power MOSFET from Infineon Technologies, part of the OptiMOS 5 family. It features a PQFN 3.3x3.3 mm package with fused lead pins. Key electrical parameters include a drain-source voltage (Vds) of 25 V and a continuous drain current (Id) of 223 A at 25°C. The on-state resistance (Rds(on)) is typically 0.9 mΩ at Vgs=10V and 1.2 mΩ at Vgs=4.5V. Gate charge (Qg) is 52 nC at 4.5V and 92 nC at 10V. It operates within a temperature range of -55°C to +150°C with a power dissipation of 69 W.

Feature Summary

  • Monolithically integrated Schottky-like diode for enhanced performance
  • Ultra-low gate charges enabling high switching efficiency
  • Small PQFN 3.3x3.3 mm footprint for improved PCB routing flexibility

Applications

  • Or-ing switches
  • Load switching applications
  • Synchronous rectification in switched mode power supplies

Procurement Notes

Verify the specific ordering suffix ATMA1 against the manufacturer's official datasheet to confirm packaging details and tape-and-reel specifications. Ensure compatibility with the intended thermal management solution given the 69 W power dissipation rating. Cross-reference the component marking code with Infineon documentation to authenticate the device before integration into production designs.

Selection Notes

Select this component when system requirements demand industry-leading low on-state resistance in a compact form factor. The 25 V rating suits low-voltage DC-DC converters and battery protection circuits. Consider the monolithic diode feature if reverse current blocking or freewheeling is required without external components. Evaluate thermal constraints carefully due to the small package size despite high current capability.

Part Context

This device belongs to the OptiMOS 5 portfolio, representing Infineon's silicon technology optimized for low Rds(on) and fast switching. It targets applications requiring high power density and efficiency in portable chargers and telecom bricks. The PQFN package offers superior thermal performance compared to traditional SMD packages while maintaining a minimal board area footprint.

Replacement Considerations

Direct pin-to-pin replacements may include other OptiMOS 5 devices with similar voltage ratings but different current capabilities. Verify that any substitute maintains the same PQFN 3.3x3.3 mm footprint and fused lead configuration. Check if alternative parts offer comparable Rds(on) values to ensure no degradation in system efficiency or thermal performance.

BSZ009NE2LS5ATMA1BSZ009NE2LS5ATMA1
$1.49
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