BSZ013NE2LS5IATMA1

$1.62

Description：MOSFET N-CH 25V 32A/40A TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4aed5d7fd077 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 25V 32A/40A TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：25 V
Current - Continuous Drain (Id) @ 25°C：32A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：1.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：50 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：3400 pF @ 12 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta), 69W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSDSON-8-FL
Package / Case：8-PowerTDFN

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BSZ013NE2LS5IATMA1

Overview

The BSZ013NE2LS5I is an OptiMOS™ 5 N-channel power MOSFET with a 25 V drain-source voltage rating. It features a maximum on-resistance of 1.3 mΩ at VGS=4.5 V and supports a continuous drain current of 186 A at TC=25°C. The device includes a monolithic integrated Schottky-like diode and is qualified according to JEDEC standards. It utilizes a PG-TSDSON-8 FL package.

Feature Summary

Optimized for high-performance buck converters
Monolithically integrated Schottky-like diode
Very low on-resistance at VGS=4.5 V
100% avalanche tested

Applications

High-performance buck converters
Or-ing switches
Load switching applications

Procurement Notes

Verify the specific ordering code matches the required package variant, as Infineon offers multiple suffixes within the same family. Confirm that the application environment remains within the specified thermal limits, particularly regarding the junction-to-case thermal resistance of 1.8 K/W. Ensure compatibility with the target operating temperature range of -55 °C to 150 °C before finalizing procurement specifications.

Selection Notes

Select this component when designing synchronous rectification stages requiring low gate charge and fast switching speeds. The low RDS(on) minimizes conduction losses in high-current paths. Consider the integrated body diode characteristics for freewheeling requirements. Evaluate the thermal management strategy based on the specified PCB cooling area dimensions to maintain safe operating temperatures under peak load conditions.

Part Context

This part belongs to Infineon's OptiMOS™ 5 portfolio, designed for low-voltage, high-efficiency power conversion. It replaces older generations like OptiMOS™ 4 by offering improved figure-of-merit through reduced gate charge and lower on-resistance. The TSDSON-8 package provides compact footprint solutions for modern dense PCB layouts.