BSZ017NE2LS5IATMA1

Overview

The BSZ017NE2LS5I is an N-channel OptiMOS™ 5 Power-MOSFET with a 25 V drain-source voltage rating. It features a maximum on-resistance of 1.7 mΩ at VGS=4.5 V and supports a continuous drain current of 134 A at TC=25°C. The device includes a monolithic integrated Schottky-like diode and has undergone 100% avalanche testing. Key dynamic parameters include a total gate charge (Qg) of 10.5 nC at VGS=4.5 V and an output charge (Qoss) of 17.5 nC. It is housed in a PG-TSDSON-8 FL package.

Feature Summary

• Optimized for high-performance buck converters
• Monolithic integrated Schottky-like diode
• Very low on-resistance at VGS=4.5 V
• 100% avalanche tested

Applications

• High-performance buck converters

Procurement Notes

Verify the complete ordering code matches the required specifications. Confirm that the component meets RoHS compliance and halogen-free requirements according to IEC61249-2-21 standards. Ensure the package type PG-TSDSON-8 FL aligns with the PCB footprint design. Check for any specific JEDEC qualification requirements relevant to the target application environment before finalizing procurement.

Selection Notes

Select this component for applications requiring low conduction losses at 4.5 V gate drive levels. The 25 V rating suits low-voltage power stages. Consider the thermal resistance values when designing heat dissipation strategies. The integrated diode characteristics should be evaluated for synchronous rectification or freewheeling duties within the circuit topology.

Part Context

This part belongs to Infineon's OptiMOS™ 5 family, designed for efficient power switching. It utilizes advanced trench technology to achieve low RDS(on). The TSDSON-8 FL package provides a compact solution with enhanced thermal performance compared to standard packages, suitable for space-constrained designs.

Replacement Considerations

No public confirmed substitute part numbers are documented in the source material.