BSZ018N04LS6ATMA1

$1.28

Description：MOSFET N-CH 40V 27A/40A TSDSON
Series：OptiMOS™ 6
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:3293063a8cb2 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 27A/40A TSDSON
Series：OptiMOS™ 6
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：27A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：1.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：31 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2700 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 83W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSDSON-8-FL
Package / Case：8-PowerTDFN

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BSZ018N04LS6ATMA1

Overview

The BSZ018N04LS6ATMA1 is an N-channel OptiMOS™ 6 power transistor with a 40 V drain-source voltage rating. It features a maximum on-resistance of 1.8 mΩ at VGS=10 V and supports a continuous drain current of 158 A at TC=25°C. The device includes a total gate charge of 31 nC (0V to 10V) and an output charge of 34 nC. It operates within a junction temperature range of -55°C to 175°C and utilizes a PG-TSDSON-8 FL package.

Feature Summary

Optimized for synchronous rectification applications
Features very low on-resistance for high efficiency
Includes superior thermal resistance characteristics
Subjected to 100% avalanche testing

Applications

Synchronous rectification circuits
Industrial power conversion systems
Automotive electronics requiring industrial qualification

Procurement Notes

Verify the specific ordering code suffix matches the required tape-and-reel packaging configuration. Confirm that the component meets JEDEC standards for industrial applications as specified in the datasheet. Ensure compatibility with the target PCB footprint dimensions for the PG-TSDSON-8 FL package before finalizing procurement orders.

Selection Notes

Select this component when low conduction losses are critical due to its optimized RDS(on). Consider the 175°C operating temperature capability for high-thermal environments. Evaluate the gate charge parameters against driver capabilities to ensure efficient switching performance in synchronous rectifier topologies.

Part Context

This part belongs to Infineon's OptiMOS™ 6 family, designed specifically for advanced power management solutions. It represents a generation of N-channel MOSFETs focused on minimizing on-state resistance while maintaining robust thermal handling capabilities suitable for demanding industrial and automotive sectors.