BSZ018NE2LSATMA1

Overview

The BSZ018NE2LSATMA1 is an N-channel OptiMOS Power-MOSFET with a 25 V drain-source breakdown voltage. It features a maximum on-resistance of 1.8 mΩ at VGS=10 V and 2.4 mΩ at VGS=4.5 V. The device supports a continuous drain current of 153 A at TC=25°C and a pulsed current of 612 A. Total gate charge is 39 nC at VGS=10 V. Thermal resistance from junction to case is 1.8 K/W, with a maximum operating temperature of 150°C.

Feature Summary

• Optimized for high-performance Buck converters in server and VGA applications
• Very low figure of merit Qoss for high-frequency switching power supplies
• Excellent gate charge x RDS(on) product (FOM)
• Superior thermal resistance characteristics

Applications

• High-performance Buck converters
• Server power supply designs
• VGA power management circuits

Procurement Notes

Verify the specific ordering code suffix against official Infineon documentation to ensure correct package and tape-and-reel specifications. Confirm RoHS compliance and halogen-free status requirements match project standards. Cross-reference JEDEC qualification data if target applications demand specific automotive or industrial reliability certifications prior to final procurement.

Selection Notes

Select this component when low conduction losses are critical at logic-level gate drive voltages. The optimized FOMQOSS makes it suitable for high-frequency SMPS topologies. Ensure thermal design accommodates the 1.8 K/W junction-to-case resistance for effective heat dissipation in compact PCB layouts.

Part Context

This part belongs to the OptiMOS family of power MOSFETs designed by Infineon Technologies. It utilizes advanced silicon technology to achieve low on-resistance and fast switching speeds within a TSDSON-8 FL package. The device is qualified according to JEDEC standards for robustness in demanding electronic environments.

Replacement Considerations

BSZ018NE2LS