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Product Detailed Parameters
- Description：MOSFET N-CH 25V 22A/40A TSDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：25 V
- Current - Continuous Drain (Id) @ 25°C：22A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：36 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2500 pF @ 12 V
- FET Feature：-
- Power Dissipation (Max)：2.1W (Ta), 69W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TSDSON-8-FL
- Package / Case：8-PowerTDFN
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Overview
The BSZ018NE2LSIATMA1 is a single N-channel Power MOSFET from Infineon Technologies, part of the OptiMOS family. It utilizes silicon technology and is housed in a TSDSON-8 surface-mount package. Key electrical parameters include a drain-source breakdown voltage (Vds) of 25 V and a continuous drain current (Id) of 40 A. The device features a maximum on-resistance (Rds(on)) of 1.9 mOhms and a gate charge (Qg) of 39 nC. It operates within a temperature range of -55 °C to +150 °C with a power dissipation rating of 69 W.
Feature Summary
- OptiMOS technology for optimized switching performance
- Low on-resistance for efficient conduction
- Enhancement mode operation
Applications
- DC-DC converters
- Motor control applications
- Load switching circuits
Procurement Notes
Verify the specific suffix 'ATMA1' against official Infineon documentation to confirm tape-and-reel packaging and lead-free status. Ensure the component matches the active or obsolete lifecycle status indicated in current datasheets before procurement planning.
Selection Notes
Select this component for low-voltage, high-current applications requiring low conduction losses. Compare Rds(on) and Qg values against alternative OptiMOS variants to balance efficiency and switching speed requirements for the specific circuit topology.
Part Context
This part belongs to the OptiMOS series of N-channel MOSFETs designed for automotive and industrial power management. The TSDSON-8 package provides thermal efficiency and compact footprint suitable for dense PCB layouts in modern electronic systems.
Replacement Considerations
Check for direct replacements such as BSZ018NE2LSI if packaging differences are acceptable. Verify pinout compatibility and electrical parameter equivalence with other BSZ018 variants before substitution.
