BSZ024N04LS6ATMA1

$0.94

Description：MOSFET N-CH 40V 24A/40A TSDSON
Series：OptiMOS™ 6
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:0c51da458a3d Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 24A/40A TSDSON
Series：OptiMOS™ 6
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：24A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：25 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1800 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 75W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSDSON-8-FL
Package / Case：8-PowerTDFN

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BSZ024N04LS6ATMA1

Overview

The BSZ024N04LS6ATMA1 is an OptiMOS 6 N-channel power transistor with a 40 V drain-source voltage rating. It features a maximum on-resistance of 2.4 mΩ at VGS=10V and supports a continuous drain current of 130 A at TC=25°C. The device operates within a temperature range of -55°C to 175°C, dissipating up to 75 W at 25°C case temperature. Key dynamic parameters include a total gate charge of 25 nC (0V to 10V) and an output charge of 28 nC. It utilizes the PG-TSDSON-8 FL package.

Feature Summary

Optimized for synchronous rectification applications
Features very low on-resistance for high efficiency
Superior thermal resistance characteristics
100% avalanche tested for robustness

Applications

Synchronous rectification in DC/DC converters
Low voltage power supply designs
General purpose switching applications

Procurement Notes

Verify the specific ordering code suffix against official Infineon documentation to ensure correct packaging and marking specifications. Confirm RoHS compliance and halogen-free status requirements match project standards. Cross-reference JEDEC qualification data if target applications demand specific reliability certifications. Ensure thermal management solutions align with the specified junction-to-case resistance values.

Selection Notes

Select this component for designs requiring low conduction losses and high thermal performance in compact footprints. Evaluate the 40 V breakdown voltage against peak transient voltages to maintain safety margins. Consider the 175°C operating limit for high-temperature environments. Compare gate charge values against driver capabilities to optimize switching speed and minimize drive losses.

Part Context

This part belongs to the BSZ0xx series of OptiMOS 6 power transistors manufactured by Infineon Technologies. It represents a silicon-based enhancement mode N-channel MOSFET designed for modern power electronics. The technology focuses on reducing on-state resistance while maintaining excellent thermal dissipation properties in surface-mount packages.