BSZ025N04LSATMA1

Overview

The BSZ025N04LSATMA1 is an N-channel OptiMOS power MOSFET with a 40 V drain-source breakdown voltage. It features a maximum on-resistance of 2.5 mΩ at VGS=10 V and supports a continuous drain current of 126 A at TC=25 °C. The device utilizes a PG-TSDSON-8 FL package, providing superior thermal resistance with a junction-to-case rating of 1.1 K/W. Key dynamic parameters include a total gate charge of 37 nC and an output charge of 33 nC.

Feature Summary

• Optimized for synchronous rectification applications
• Features enlarged source interconnection for higher solder joint reliability
• Logic level operation with low gate threshold voltage
• Qualified according to JEDEC standards

Applications

• Synchronous rectification in DC/DC converters
• Low voltage power switching circuits
• Automotive electronic control units

Procurement Notes

Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure that the component marking '025N04L' matches the physical device received. Cross-reference the datasheet revision 2.3 to validate all electrical limits before integration into final designs.

Selection Notes

Select this component when low conduction losses are critical in 40 V systems. The TSDSON-8 FL package offers high current capability relative to its footprint. Evaluate the thermal resistance requirements based on the intended PCB copper area, as the junction-to-ambient rating depends heavily on the cooling area size.

Part Context

This part belongs to the OptiMOS family of power transistors designed by Infineon Technologies. It represents a generation of silicon MOSFETs optimized for efficiency and robustness in automotive and industrial environments. The FL package variant specifically addresses mechanical reliability concerns in surface-mount assembly processes.

Replacement Considerations

BSZ025N04LS