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The BSZ035N03LSGATMA1 is an N-channel enhancement-mode MOSFET from Infineon's OptiMOS 3 series. It features a maximum drain-source voltage of 30 V and a continuous drain current of 100 A. The device utilizes a TDSON surface-mount package with 8 pins, measuring 6.35 mm in length, 5.35 mm in width, and 1.1 mm in height. Key electrical parameters include a maximum on-resistance of 4.7 mΩ, a power dissipation rating of 69 W, and a gate threshold voltage range of 1 V to 2.2 V. Typical gate charge is 20 nC at 4.5 V. Operating temperatures span from -55 °C to +150 °C.
Verify the complete part number including suffixes against official Infineon documentation to ensure correct variant selection. Confirm RoHS compliance status and specific packaging options such as tape and reel quantities directly with the manufacturer or authorized distributors prior to ordering.
Select this component when high current handling up to 100 A is required within a 30 V system. The TDSON package offers a compact footprint suitable for space-constrained PCB layouts. Ensure thermal design accounts for the 69 W dissipation rating under expected operating conditions.
This device belongs to the OptiMOS 3 family, designed for efficient power switching. It represents a single N-channel configuration intended for general-purpose low-voltage applications requiring robust current capability and reliable operation across wide temperature ranges.
Consult official replacement guides for verified substitutes. Generic equivalents may not match the specific Rds(on) or thermal characteristics of the original OptiMOS 3 design.