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Product Detailed Parameters
- Description：MOSFET N-CH 25V 16A/40A TSDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：25 V
- Current - Continuous Drain (Id) @ 25°C：16A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3.6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：16 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1200 pF @ 12 V
- FET Feature：-
- Power Dissipation (Max)：2.1W (Ta), 37W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TSDSON-8-FL
- Package / Case：8-PowerTDFN
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Overview
The BSZ036NE2LSATMA1 is a single N-channel power MOSFET from Infineon Technologies, part of the OptiMOS 25V family. It features a 25 V drain-source voltage rating and a continuous drain current of 16 A. The device exhibits a maximum on-state resistance of 36 mΩ at 10 V gate drive. Key electrical parameters include a gate threshold voltage of 2 V, a total gate charge of 9 nC, and a forward transconductance of 34 S. It operates within a temperature range of -55 °C to +150 °C and utilizes a TSDSON-8 surface-mount package.
Feature Summary
- Ultra-low gate and output charge characteristics for efficient switching
- Lowest on-state resistance available in small footprint packages
- Optimized for demanding low-voltage applications
Applications
- DC/DC converters
- Power distribution networks
- Load switches
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status via official datasheets. Check lifecycle status as some sources indicate scheduled obsolescence. Ensure storage conditions meet semiconductor handling standards to prevent moisture sensitivity issues prior to assembly.
Selection Notes
Select this component for designs requiring high efficiency in compact spaces. The low gate charge reduces driver losses, while the low Rds(on) minimizes conduction losses. Consider thermal management requirements given the TSDSON-8 package limitations. Validate that the 25 V voltage rating provides sufficient margin for the specific circuit operating conditions.
Part Context
This part belongs to Infineon's OptiMOS 25V series, designed for low-voltage power switching. It competes with other 25 V N-channel MOSFETs offering similar current ratings. The TSDSON-8 package allows for high-density PCB layouts compared to larger traditional packages.
Replacement Considerations
Check for equivalent parts with matching 25 V rating and comparable Rds(on). Verify pin compatibility if substituting directly. Note that BSZ036NE2LSATMA1 may be subject to obsolescence; consult manufacturer for recommended alternatives.
