BSZ037N06LS5ATMA1

Overview

The BSZ037N06LS5ATMA1 is an N-channel OptiMOS power transistor with a 60 V drain-source breakdown voltage. It features a maximum on-state resistance of 3.7 mΩ at VGS=10 V and supports a continuous drain current of 104 A at TC=25°C. The device utilizes a TSDSON-8 FL package, providing a thermal resistance from junction to case bottom of 1.8 °C/W. Total gate charge is 18 nC when driven to 4.5 V and 35 nC at 10 V. It operates within a temperature range of -55°C to +150°C.

Feature Summary

• Optimized for high-performance synchronous rectification in switch-mode power supplies.
• Features superior thermal resistance via the PG-TSDSON-8 FL package design.
• Fully qualified according to JEDEC standards for industrial applications.
• Includes 100% avalanche testing for enhanced reliability.

Applications

• Synchronous rectification in high-performance SMPS designs
• Industrial electronic systems requiring robust power switching

Procurement Notes

Verify the specific ordering code suffix against official Infineon documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets RoHS compliance and halogen-free requirements as defined by IEC61249-2-21 standards before finalizing procurement orders.

Selection Notes

Select this component for applications requiring low conduction losses and efficient heat dissipation in compact footprints. Evaluate the thermal resistance characteristics relative to the PCB copper area and ambient conditions to ensure safe operating temperatures are maintained under peak load scenarios.

Part Context

This part belongs to the OptiMOS family of power transistors manufactured by Infineon Technologies. It is designed to provide high efficiency and reliability in power conversion circuits. The technology focuses on minimizing on-state resistance while maintaining robust performance across varying thermal environments.

Replacement Considerations

BSZ037N06LS5