BSZ039N06NSATMA1

$1.08

Description：MOSFET N-CH 60V 18A/40A TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:442a04c2c023 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 18A/40A TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：18A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：3.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3.3V @ 36µA
Gate Charge (Qg) (Max) @ Vgs：34 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2500 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta), 69W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSDSON-8-34
Package / Case：8-PowerVDFN

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BSZ039N06NSATMA1

Overview

The BSZ039N06NSATMA1 is an N-channel power MOSFET from Infineon Technologies, belonging to the OptiMOS 5 product family. It utilizes a PQFN 3.3x3.3mm package with fused leads for enhanced thermal performance. Key electrical parameters include a drain-source voltage (Vds) of 60 V and a continuous drain current (Id) of 102 A at 25°C case temperature. The device features a maximum on-resistance (Rds(on)) of 3.9 mΩ at 10 V gate drive. Additional specifications include a typical gate charge (Qg) of 27 nC, a threshold voltage (Vgs(th)) of 2.8 V, and a power dissipation (Ptot) of 69 W. The component operates within a junction temperature range of -55 °C to 150 °C.

Feature Summary

OptiMOS 5 technology architecture designed for high efficiency and low conduction losses
PQFN 3.3x3.3mm package construction with fused leads for superior heat dissipation
Enhanced avalanche ruggedness capabilities for robust circuit protection

Applications

DC-DC converter modules
Motor control systems
Power supply units

Procurement Notes

Verify the complete part number including the ATMA1 suffix against official Infineon documentation to ensure correct tape-and-reel packaging configuration. Confirm RoHS compliance status through the manufacturer's material content declaration. Cross-reference datasheet revisions to validate electrical characteristics match specific design requirements before finalizing procurement orders.

Selection Notes

Select this component when a 60 V rating and high current capacity are required in a compact surface-mount footprint. The low Rds(on) value supports efficient power handling in space-constrained designs. Evaluate thermal management needs based on the specified power dissipation limits and operating temperature range to ensure reliable long-term operation under load conditions.

Part Context

This device is part of the OptiMOS 5 series, representing advanced silicon technology for 60 V applications. It succeeds previous generations by offering improved figure-of-merit metrics. The PQFN form factor provides a balance between electrical performance and PCB area efficiency compared to larger packages.