BSZ040N04LSGATMA1

$1.22

Description：MOSFET N-CH 40V 18A/40A 8TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:84a9c0364940 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 18A/40A 8TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：18A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2V @ 36µA
Gate Charge (Qg) (Max) @ Vgs：64 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5100 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta), 69W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSDSON-8
Package / Case：8-PowerTDFN

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BSZ040N04LSGATMA1

Overview

The BSZ040N04LSGATMA1 is an N-channel OptiMOS 3 power transistor with a drain-source voltage of 40 V and a maximum on-resistance of 4.0 mΩ at VGS=10 V. It supports a continuous drain current of up to 105 A at TC=25 °C and features a total gate charge of 48 nC at VGS=10 V. The device operates within a junction temperature range of -55 °C to 150 °C, offers a thermal resistance from junction to case of 1.8 K/W, and includes an integrated body diode.

Feature Summary

Optimized technology for DC/DC converters and fast switching in SMPS applications
Logic level compatible with excellent gate charge x RDS(on) figure of merit
Superior thermal resistance and very low on-resistance characteristics
Qualified according to JEDEC standards for target applications

Applications

Switching Mode Power Supplies (SMPS)
DC/DC Converters
Target applications qualified according to JEDEC standards

Procurement Notes

Verify the specific ordering code suffix against official Infineon documentation to ensure correct package and tape-and-reel specifications. Confirm RoHS compliance and halogen-free status requirements prior to procurement. Ensure that the requested quantity aligns with standard factory packaging configurations to avoid handling discrepancies during assembly.

Selection Notes

Select this component when designing circuits requiring low conduction losses and high efficiency in 40 V systems. Consider the logic-level gate drive capability for direct interfacing with standard control ICs. Evaluate the thermal management strategy based on the specified junction-to-case resistance and safe operating area limits under varying duty cycles.

Part Context

This part belongs to the OptiMOS 3 family of power transistors manufactured by Infineon Technologies. It utilizes advanced silicon technology to achieve low on-resistance and fast switching speeds. The component is housed in a PG-TSDSON-8 surface-mount package designed for efficient heat dissipation and compact board layout in modern power electronics designs.