BSZ040N06LS5ATMA1

$1.54

Description：MOSFET N-CH 60V 40A TSDSON
Series：OptiMOS™ 5
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:a5ebdd978941 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 40A TSDSON
Series：OptiMOS™ 5
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.3V @ 36µA
Gate Charge (Qg) (Max) @ Vgs：6.6 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3100 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：69W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSDSON-8-FL
Package / Case：8-PowerTDFN

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BSZ040N06LS5ATMA1

Overview

The BSZ040N06LS5ATMA1 is an N-channel OptiMOS power transistor with a 60 V drain-source breakdown voltage. It features a maximum on-state resistance of 4.0 mΩ at VGS=10 V and ID=20 A, supporting a continuous drain current of 101 A at TC=25 °C. The device includes an internal body diode rated for 58 A forward current. Key dynamic parameters include a total gate charge of 18 nC (up to 4.5 V) and 32 nC (sync FET mode), with an avalanche energy rating of 117 mJ. It operates within a junction temperature range of -55 °C to 150 °C.

Feature Summary

Optimized for high-performance synchronous rectification in switching mode power supplies.
Features superior thermal resistance with a low junction-to-case value of 1.1 K/W typical.
Includes an integrated body diode with fast reverse recovery characteristics.
Qualified according to JEDEC standards for target applications.

Applications

Synchronous rectification in DC/DC converters
High-efficiency switching mode power supplies
Low-voltage motor control applications

Procurement Notes

Verify the specific ordering suffix ATMA1 against the manufacturer's official documentation to ensure correct packaging and marking specifications. Confirm that the PG-TSDSON-8 FL package dimensions align with your PCB footprint requirements. Ensure compliance with RoHS and halogen-free standards as defined in the datasheet before finalizing procurement.

Selection Notes

Select this component when designing circuits requiring low conduction losses at 60 V ratings. The low gate charge supports high-frequency operation, while the robust avalanche capability provides resilience against inductive load transients. Evaluate thermal management strategies based on the specified RthJA values for your specific PCB copper area constraints.

Part Context

This part belongs to Infineon's OptiMOS family of power transistors, designed for efficiency and reliability in power conversion. The BSZ040N06LS5 variant specifically targets 60 V applications, offering a balance between low on-resistance and fast switching speeds suitable for modern compact power electronics designs.

Replacement Considerations

Consult official replacement lists or cross-reference tools provided by Infineon Technologies for verified substitutes. Do not assume compatibility with other manufacturers' parts without verifying pinout, electrical limits, and thermal characteristics against the original datasheet.