BSZ0506NSATMA1

Overview

The BSZ0506NSATMA1 is a single N-channel Power MOSFET from Infineon Technologies, utilizing OptiMOS technology. It features a 30 V drain-source voltage rating and supports a continuous drain current of 40 A at 25°C. The device offers a maximum on-resistance of 5.3 mΩ at 4.5 V gate drive. Key electrical characteristics include a typical gate charge of 5.2 nC at 4.5 V and 11 nC at 10 V. It operates within a temperature range of -55°C to +150°C and is housed in an 8-pin PQFN 3.3 x 3.3 mm surface-mount package.

Feature Summary

• Logic Level Gate Drive
• OptiMOS Technology
• PQFN Surface Mount Package

Applications

• Power Switching Applications
• DC-DC Converters
• Motor Control

Procurement Notes

Verify the complete part number including the ATMA1 suffix against official Infineon documentation to ensure correct tape-and-reel packaging specifications. Confirm that the PQFN 3.3x3.3mm footprint matches the target PCB design. Cross-reference thermal resistance values with system requirements to validate heat dissipation capabilities under intended operating conditions.

Selection Notes

Select this component for applications requiring low on-resistance and fast switching speeds within a compact form factor. The logic-level gate drive simplifies control circuitry by allowing direct interfacing with standard logic outputs. Ensure the thermal management solution accommodates the junction-to-case thermal resistance for reliable operation at high currents.

Part Context

This device belongs to the OptiMOS family of power transistors designed for efficient power conversion. It represents a specific variant optimized for 30V applications, distinguishing it from higher voltage counterparts like the BSZ065N06LS5ATMA1 or lower voltage options. The technology focuses on minimizing conduction losses while maintaining robust switching performance.

Replacement Considerations

BSZ0506NS