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Product Detailed Parameters
- Description：MOSFET N-CH 30V 16A/40A 8TSDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：16A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：35 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2800 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.1W (Ta), 50W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TSDSON-8
- Package / Case：8-PowerTDFN
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Overview
BSZ050N03LSGATMA1 is an N-channel enhancement mode power MOSFET from Infineon Technologies, utilizing OptiMOS 3 technology. It features a TDSON-8 surface-mount package with a drain-source voltage rating of 30 V and a continuous drain current capacity of 40 A at 25 °C. The device exhibits a maximum on-state resistance of 5.0 mΩ at a gate-source voltage of 4.5 V. Thermal performance includes a junction-to-case thermal resistance of 3.5 K/W and a total power dissipation capability of 36 W. The component operates within a temperature range of -55 °C to +150 °C.
Feature Summary
- OptiMOS 3 technology provides optimized low on-resistance for high efficiency.
- Logic level gate drive compatibility enables direct control by standard logic signals.
- Monolithically integrated Schottky-like diode offers fast body diode recovery characteristics.
Applications
- DC-DC converter output stages
- Synchronous rectification circuits
- Low-side switching applications
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status through the manufacturer's material content declaration. Check the lifecycle status as components may be marked as not recommended for new designs. Ensure the datasheet version matches the required technical parameters before integration into production.
Selection Notes
Select this component when a 30 V N-channel MOSFET with low RDS(on) in a compact TDSON-8 package is required. Consider the 40 A continuous current rating and 36 W power dissipation limits relative to the thermal management design. Evaluate the logic-level gate threshold requirements against the driving circuit capabilities. Compare thermal resistance values with alternative packages if higher power handling is necessary.
Part Context
This part belongs to the OptiMOS 3 family of power MOSFETs designed for low-voltage applications. The series focuses on minimizing conduction losses while maintaining robust switching performance. The TDSON-8 package provides a balance between thermal conductivity and board space efficiency for modern electronic designs.
Replacement Considerations
Consult official replacement lists for verified substitutes. Cross-reference pinouts and electrical parameters carefully when considering alternatives from other manufacturers or different product lines within the same brand.
