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Product Detailed Parameters
- Description：MOSFET N-CH 30V 15A/40A 8TSDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：15A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：46 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3600 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.1W (Ta), 48W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TSDSON-8
- Package / Case：8-PowerTDFN
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Overview
BSZ050N03MSGATMA1 is a single N-channel enhancement mode MOSFET from Infineon's OptiMOS 3M series, manufactured using silicon technology. It features a TDSON-8 surface-mount package and supports a drain-source voltage of 30 V with a continuous drain current of 40 A. The device exhibits a maximum on-resistance of 7.3 mOhms at 10 V gate drive and a typical gate charge of 23 nC. It operates within a temperature range of -55 °C to +150 °C, offering a power dissipation capacity of 30 W.
Feature Summary
- OptiMOS 3M technology provides optimized performance for low-voltage switching applications.
- Integrated monolithic Schottky-like diode functionality enhances circuit efficiency.
- Logic-level gate drive capability allows direct interfacing with standard control signals.
Applications
- Low-side switching in DC-DC converter circuits
- Motor control systems requiring high current handling
- Power distribution units in industrial equipment
Procurement Notes
Verify the component status as Not Recommended for New Designs (NRND) before finalizing any procurement plans. Confirm that the TDSON-8 package dimensions align with existing PCB footprints. Ensure that the thermal management design accommodates the specified power dissipation limits under expected operating conditions.
Selection Notes
Select this component when a 30 V rating and 40 A continuous current are required in a compact TDSON-8 form factor. Consider the 7.3 mOhm on-resistance for conduction loss calculations. Evaluate the logic-level gate threshold requirements against the available drive voltage in the target application circuit.
Part Context
This part belongs to the OptiMOS 3M family, designed for efficient power switching in automotive and industrial sectors. It utilizes advanced trench gate technology to minimize on-resistance while maintaining robust avalanche characteristics. The TDSON-8 package offers improved thermal performance compared to traditional surface-mount options.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with alternative components by matching electrical parameters such as Vds, Id, Rds(on), and package type.
