BSZ0589NSATMA1

$0.98

Description：MOSFET N-CH 30V 17A TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4c8de77178a5 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 17A TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：17A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：4.4mOhm @ 8A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：15 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：950 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSDSON-8-FL
Package / Case：8-PowerTDFN

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BSZ0589NSATMA1

Overview

The BSZ0589NSATMA1 is an N-channel OptiMOS™ 5 Power-MOSFET with a drain-source voltage of 30 V and a continuous drain current of 17 A. It features a maximum on-resistance of 4.4 mΩ at VGS=4.5 V and 3.5 mΩ at VGS=10 V. The device has a total gate charge of 11 nC at VGS=10 V and 5.2 nC at VGS=4.5 V, with an output charge of 7.2 nC. It operates within a junction temperature range of -55 °C to 150 °C and is housed in a PG-TSDSON-8 FL package.

Feature Summary

Optimized for high-performance wireless chargers
Very low FOMQOSS for high-frequency SMPS
Low FOMSW for high-frequency SMPS
Excellent gate charge x RDS(on) product (FOM)

Applications

High-performance wireless chargers
High-frequency synchronous rectification

Procurement Notes

Verify the component status as obsolete before procurement planning. Confirm that the specific ordering code matches the required package variant. Ensure compatibility with JEDEC standards if targeting automotive or industrial applications. Check for halogen-free compliance according to IEC61249-2-21 requirements.

Selection Notes

Select this component for applications requiring low on-resistance at logic-level gate voltages. Consider its thermal resistance characteristics for PCB layout optimization. Evaluate the avalanche energy rating for circuits prone to inductive load switching. Verify the package dimensions against the target PCB footprint.

Part Context

This part belongs to Infineon's OptiMOS™ 5 family, designed for power management applications. It utilizes advanced trench technology to achieve low conduction losses. The TSDSON-8 FL package provides efficient heat dissipation through the exposed pad.