BSZ0704LSATMA1

$0.70

Description：MOSFET N-CH 60V 11A/40A TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:37a9555b63df Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 11A/40A TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：11A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：9.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.3V @ 14µA
Gate Charge (Qg) (Max) @ Vgs：8.6 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1300 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta), 36W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TDSON-8 FL
Package / Case：8-PowerTDFN

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BSZ0704LSATMA1

Overview

The BSZ0704LS is a 60 V N-channel OptiMOS power transistor in a PG-TSDSON-8 FL package. It features a maximum drain-source voltage of 60 V, continuous drain current of 40 A at 25 °C case temperature, and pulsed drain current of 160 A. The maximum on-state resistance is 9.9 mΩ at VGS=10 V. Gate charge (QG) is typically 6.9 nC at VGS=4.5 V, with output charge (QOSS) at 13 nC. Thermal resistance junction-to-case is 3.5 K/W maximum.

Feature Summary

Optimized for charger applications
Logic-level gate drive capability
High-frequency switching suitability
Superior thermal resistance design

Applications

Charger designs
Adapter circuits
High-frequency switching applications

Procurement Notes

Verify the exact ordering code matches the required package variant. Confirm RoHS compliance and halogen-free status against project specifications. Ensure the component meets Standard Grade requirements. Check datasheet revision history for any parameter updates before finalizing procurement.

Selection Notes

Select this component for low-voltage, high-current applications requiring efficient logic-level control. Evaluate thermal management needs based on the specified junction-to-case resistance. Consider the avalanche energy rating if inductive load protection is required without external snubbers.

Part Context

This device belongs to Infineon's OptiMOS family, specifically designed for power delivery and charging solutions. It utilizes advanced silicon technology to achieve low on-resistance within a compact surface-mount footprint suitable for dense PCB layouts.