BSZ070N08LS5ATMA1

$1.00

Description：MOSFET N-CH 80V 40A TSDSON
Series：OptiMOS™ 5
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:3b92dd5a6f72 Category: Single FETs, MOSFETs Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 80V 40A TSDSON
Series：OptiMOS™ 5
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.3V @ 36µA
Gate Charge (Qg) (Max) @ Vgs：5 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2340 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：69W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSDSON-8-FL
Package / Case：8-PowerTDFN

Download product information

BSZ070N08LS5ATMA1

Overview

The BSZ070N08LS5ATMA1 is an N-channel enhancement mode MOSFET from the OptiMOS 5 series, manufactured by Infineon Technologies. It utilizes silicon technology and is housed in a TSDSON-8 surface-mount package. Key electrical parameters include a drain-source voltage (Vds) of 80 V, a continuous drain current (Id) of 40 A, and a maximum on-resistance (Rds(on)) of 7.4 mOhms at 10 V gate drive. The device features a typical gate charge (Qg) of 14.1 nC, with rise and fall times of 4.8 ns and 5.8 ns respectively. It operates within a temperature range of -55 °C to +150 °C, with a power dissipation rating of 69 W.

Feature Summary

OptiMOS 5 technology for optimized switching performance
Low gate charge for efficient drive requirements
Enhanced thermal stability up to 150 °C junction temperature

Applications

Telecom power supplies
Server power distribution
General purpose low-side switching

Procurement Notes

Verify the complete part number including the ATMA1 suffix to ensure correct tape-and-reel packaging configuration. Confirm RoHS compliance status through official documentation prior to integration. Cross-reference datasheet revisions to validate parameter consistency against design specifications.

Selection Notes

Select this component for applications requiring 80 V blocking capability with moderate current handling. The TSDSON-8 package offers a compact footprint suitable for space-constrained designs. Evaluate thermal management needs based on the 69 W power dissipation rating and specific PCB copper area available for heat sinking.

Part Context

This part belongs to the OptiMOS 5 family, designed for high-efficiency power conversion. It targets telecom and server infrastructure markets where reliability and switching speed are critical. The S3O8 package variant provides improved thermal performance compared to standard SO-8 packages.