BSZ0803LSATMA1

$1.18

Description：MOSFET N-CH 100V 9A/40A TSDSON
Series：OptiMOS™ 5
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:cdd1536d4005 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 9A/40A TSDSON
Series：OptiMOS™ 5
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：9A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：14.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.3V @ 23µA
Gate Charge (Qg) (Max) @ Vgs：15 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1300 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta), 52W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TDSON-8 FL
Package / Case：8-PowerTDFN

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BSZ0803LSATMA1

Overview

The BSZ0803LSATMA1 is an OptiMOS™5 N-channel power MOSFET with a 100 V drain-source voltage rating. It features a maximum continuous drain current of 40 A at 25 °C case temperature and a typical gate charge of 7.6 nC at 4.5 V. The device offers a maximum on-state resistance of 14.6 mΩ at 10 V and 20.8 mΩ at 4.5 V. Packaged in PG-TSDSON-8 FL, it supports a junction temperature range from -55 °C to 150 °C.

Feature Summary

Optimized for high-frequency switching applications
Logic-level gate drive capability
100% avalanche tested for ruggedness

Applications

Charger designs
High-frequency switching circuits

Procurement Notes

Verify the specific ordering code suffix ATMA1 against official Infineon documentation to confirm packaging details. Ensure compatibility with PG-TSDSON-8 FL footprint requirements during procurement planning.

Selection Notes

Select this component for applications requiring low gate charge and optimized FOM. Confirm thermal management aligns with the specified RthJA values for the target operating environment.

Part Context

This part belongs to the OptiMOS™5 family, designed for power transistor applications. It utilizes advanced trench technology to achieve low on-resistance and fast switching speeds within a compact surface-mount package.