BSZ0804LSATMA1

Overview

The BSZ0804LSATMA1 is an N-channel OptiMOS™5 power transistor with a 100 V drain-source voltage rating. It features a maximum on-state resistance of 9.6 mΩ at VGS=10V and supports a continuous drain current of 40 A at TC=25°C. The device utilizes a PG-TSDSON-8 FL surface-mount package. Key electrical parameters include a gate charge of 30 nC at VGS=10V, a threshold voltage range of 1.1 V to 2.3 V, and a junction temperature operating range from -55 °C to 150 °C.

Feature Summary

• Logic-level operation optimized for high-frequency switching applications
• Excellent figure of merit combining low gate charge and on-resistance
• Monolithically integrated reverse diode with avalanche capability

Applications

• Charger designs
• Adapter circuits
• High-frequency switching power supplies

Procurement Notes

Verify the component authenticity by cross-referencing the marking code '0804LS' against official Infineon documentation. Confirm that the ordering suffix ATMA1 corresponds to the specified tape-and-reel packaging format. Ensure the procurement source provides valid traceability records consistent with the manufacturer's quality standards.

Selection Notes

Select this component when designing systems requiring a 100 V logic-level N-channel MOSFET with low conduction losses. The TSDSON-8 FL package offers a compact footprint suitable for space-constrained layouts. Evaluate thermal performance based on the specific PCB copper area and ambient conditions to ensure safe operation within the 150 °C junction limit.

Part Context

This part belongs to the OptiMOS™5 family of power transistors designed for efficiency and reliability. It represents a generation of trench technology focused on reducing switching losses and improving thermal management in consumer electronics and power delivery infrastructure.

Replacement Considerations

BSZ0804LS