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Product Detailed Parameters
- Description：MOSFET N-CH 80V 40A TSDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：8.4mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3.8V @ 31µA
- Gate Charge (Qg) (Max) @ Vgs：25 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1820 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：63W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TSDSON-8-FL
- Package / Case：8-PowerTDFN
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Overview
The BSZ084N08NS5ATMA1 is an N-channel power MOSFET from Infineon's OptiMOS 5 family, designed for telecom and server applications. It features a maximum drain-source voltage of 80 V and a typical on-resistance of 8.4 mΩ at 10 V gate drive. The device supports a continuous drain current of 40 A and a pulsed current of 160 A at 25°C. Key electrical parameters include a total gate charge of 20 nC, input capacitance of 1400 pF, and output capacitance of 240 pF. Thermal resistance junction-to-case is 2 K/W, with a junction-to-ambient rating of 60 K/W. It operates within a temperature range of -55°C to 150°C in an S3O8 PQFN 3.3 x 3.3 mm package.
Feature Summary
- OptiMOS 5 technology optimized for high efficiency in telecom and server environments
- Low on-resistance combined with fast switching characteristics for reduced conduction and switching losses
- Robust thermal performance suitable for compact surface-mount designs
Applications
- Telecommunications power supplies
- Server power distribution modules
- Point-of-load conversion stages
Procurement Notes
Verify the specific suffix ATMA1 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure the component matches the required RoHS compliance standards for your target market. Cross-reference the datasheet version to validate all electrical limits before finalizing procurement orders.
Selection Notes
Select this component when designing systems requiring an 80 V rating with moderate current handling capabilities around 40 A. The low gate charge facilitates efficient driver design. Consider the thermal resistance values to determine appropriate heatsinking or PCB copper area requirements for sustained operation under load.
Part Context
This part belongs to the OptiMOS 5 series, representing advanced silicon technology from Infineon Technologies. It is engineered specifically for high-density power applications where space constraints and thermal management are critical. The S3O8 package provides a balance between electrical performance and mechanical footprint for modern electronic assemblies.
Replacement Considerations
Consult official Infineon substitution guides for verified alternatives. Do not assume compatibility based solely on pinout or voltage ratings without verifying thermal and dynamic parameter alignment.
