BSZ086P03NS3EGATMA1

$0.88

Description：MOSFET P-CH 30V 13.5A/40A TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:10f766f4dec3 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 13.5A/40A TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：13.5A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：8.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3.1V @ 105µA
Gate Charge (Qg) (Max) @ Vgs：57.5 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：4785 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta), 69W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSDSON-8
Package / Case：8-PowerTDFN

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BSZ086P03NS3EGATMA1

Overview

The BSZ086P03NS3EGATMA1 is a single P-Channel OptiMOS™ P3 power transistor in a PG-TSDSON-8 package. It features a drain-source breakdown voltage of -30 V and a maximum on-state resistance of 8.6 mΩ at VGS = -10 V. The device supports a continuous drain current of -40 A at TC = 25 °C and handles pulsed currents up to -160 A. Total gate charge is typically 43.2 nC, with an operating temperature range from -55 °C to +150 °C.

Feature Summary

Optimized for notebook applications with a 25 V gate-source rating
High thermal performance with low junction-to-case thermal resistance
ESD protected structure compliant with JESD22-A114 HBM standards
Halogen-free construction meeting IEC61249-2-21 requirements

Applications

Battery management systems
Load switching circuits
Notebook computer power distribution

Procurement Notes

Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure component authenticity through authorized channels. Confirm RoHS compliance status and material declarations match current regulatory requirements before integration into final assemblies.

Selection Notes

Select this component for high-current DC-DC conversion or load switch designs requiring low conduction losses. The -30 V rating suits 12 V and 24 V bus architectures. Evaluate thermal constraints based on the 1.8 K/W junction-to-case resistance. Consider the 25 V gate threshold when designing drive circuits for optimal switching efficiency.

Part Context

This part belongs to the OptiMOS™ P3 family of p-channel power MOSFETs manufactured by Infineon Technologies. The series targets mobile and notebook computing markets where space efficiency and thermal management are critical. The PG-TSDSON-8 package provides a compact footprint suitable for dense PCB layouts.