BSZ086P03NS3GATMA1

$1.01

Description：MOSFET P-CH 30V 13.5A/40A TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:0e6556517a43 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 13.5A/40A TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：13.5A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：8.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3.1V @ 105µA
Gate Charge (Qg) (Max) @ Vgs：57.5 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：4785 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta), 69W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSDSON-8
Package / Case：8-PowerTDFN

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BSZ086P03NS3GATMA1

Overview

The BSZ086P03NS3GATMA1 is a single P-Channel OptiMOS™ P3 power transistor with a -30 V drain-source voltage. It supports a continuous drain current of -40 A at case temperature and features a maximum on-state resistance of 8.6 mΩ at VGS = -10 V. The device operates up to 150 °C junction temperature, utilizes PG-TSDSON-8 packaging, and includes an integrated body diode.

Feature Summary

Single P-Channel configuration in S3O8 package
Qualified according JEDEC for target applications
RoHS compliant and halogen-free

Applications

Battery management systems
Load switching circuits
Notebook applications

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm tape-and-reel packaging details. Ensure component authenticity through authorized distribution channels. Confirm RoHS compliance status matches current regulatory requirements before integration into final assemblies.

Selection Notes

Select this component for low-side or high-side switching requiring fast turn-off characteristics. Evaluate thermal resistance values relative to PCB copper area constraints. Consider gate charge parameters when designing driver circuits for optimal switching efficiency.

Part Context

This part belongs to the OptiMOS™ P3 family designed for notebook and portable electronics. It offers improved performance over previous generations with lower on-resistance and optimized gate charge characteristics for efficient power management.