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Product Detailed Parameters
- Description：MOSFET N-CH 30V 18A/40A TSDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：18A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1463 pF @ 15 V
- FET Feature：Schottky Diode (Body)
- Power Dissipation (Max)：2.1W (Ta), 37W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TSDSON-8-FL
- Package / Case：8-PowerTDFN
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Overview
BSZ0904NSIATMA1 is an N-channel power MOSFET from the OptiMOS™ family, rated for a maximum drain-source voltage of 30 V. It features a typical on-resistance of 5.7 mΩ at 4.5 V gate drive and 4 mΩ at 10 V. The device supports a continuous drain current of 40 A at 25°C and a pulsed current of 160 A. Key electrical parameters include a total gate charge of 8.5 nC (typical @ 4.5 V) and 17 nC (typical @ 10 V), with input capacitance of 1100 pF and output capacitance of 460 pF. Thermal resistance is specified at 3.4 K/W.
Feature Summary
- Logic-level gate threshold enables efficient driving from low-voltage control signals.
- Monolithically integrated Schottky-like diode provides fast body diode recovery characteristics.
- Optimized package design ensures robust thermal performance for high-current applications.
Applications
- Synchronous rectification in DC-DC converters
- Low-side switching in motor control circuits
- Power management modules in industrial equipment
Procurement Notes
Verify the complete part number including the ATMA1 suffix to ensure correct tape-and-reel packaging configuration. Confirm that the specific revision matches the required datasheet version for accurate parameter validation. Cross-reference the ordering code with official Infineon documentation to avoid substitution errors during procurement.
Selection Notes
Select this component when a 30 V rating and logic-level compatibility are required for synchronous rectification. The 5.7 mΩ RDS(on) at 4.5 V makes it suitable for systems driven by standard microcontrollers or low-voltage gate drivers without additional level shifting circuitry.
Part Context
This device belongs to the BSZ series of OptiMOS™ power MOSFETs, designed for high-efficiency power conversion. It utilizes Infineon's trench technology to achieve low on-resistance within a compact PQFN 3.3 x 3.3 mm package, balancing electrical performance with board space constraints.
Replacement Considerations
BSZ0904NSI is the non-tape-and-reel variant of this component. Verify package compatibility if transitioning between reel and tube formats. No direct functional substitutes are confirmed in the provided data.
