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Product Detailed Parameters
- Description：MOSFET P-CH 30V 40A TDSON-8
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：8.6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：1.9V @ 105µA
- Gate Charge (Qg) (Max) @ Vgs：43.2 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：3190 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：69W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8
- Package / Case：8-PowerTDFN
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Overview
BSZ0905PNSATMA1 is a single-channel P-Channel power MOSFET from Infineon Technologies, utilizing TRENCH technology. It features a drain-source breakdown voltage of 30 V and a continuous drain current of 40 A at 25°C. The device offers a maximum on-resistance of 8.7 mOhms. It operates within a temperature range of -55°C to +150°C with a power dissipation capacity of 69 W in a TSDSON-8 package.
Feature Summary
- Single-channel P-Channel configuration for efficient switching applications
- TRENCH technology architecture for optimized performance characteristics
- Integrated monolithic Schottky-like diode functionality
Applications
- Low-side load switching circuits
- Power management modules requiring high current handling
- Automotive electronic control units
Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm datasheet revisions match specific manufacturing batches. Check for RoHS compliance documentation. Ensure storage conditions adhere to moisture sensitivity levels. Validate part markings against official Infineon specifications.
Selection Notes
Evaluate thermal resistance requirements for the intended PCB layout. Consider gate charge parameters for driver compatibility. Assess pulsed current capabilities against peak load demands. Verify package dimensions fit mechanical constraints. Review threshold voltage ranges for logic level interfacing needs.
Part Context
This component belongs to Infineon's TRENCH MOSFET portfolio, designed for low-voltage high-current applications. It complements other BSZ series devices offering similar form factors but varying electrical ratings. The TSDSON-8 package provides compact surface-mount solutions for dense circuit designs.
Replacement Considerations
BSZ0901NSI serves as a comparable N-Channel alternative within the same OptiMOS family. Cross-reference pinouts and thermal characteristics before substitution. Verify voltage and current ratings meet or exceed original design specifications.
