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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 4.8A WISON-8
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate, 4.5V Drive
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：4.8A (Ta), 7.6A (Ta)
- Rds On (Max) @ Id, Vgs：18mOhm @ 9A, 10V, 9mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：3nC @ 4.5V, 6.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：340pF @ 15V, 730pF @ 15V
- Power - Max：700mW (Ta), 860mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：PG-WISON-8
- Grade：-
- Qualification：-
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Overview
The BSZ0908NDXTMA2 is a dual N-channel Power MOSFET from Infineon Technologies, utilizing OptiMOS technology. It features a 30V drain-source breakdown voltage and operates within a -55°C to +150°C junction temperature range. The device provides a continuous drain current of 19A at 25°C and supports a pulsed current of 30A. Key electrical parameters include a maximum on-resistance of 18mΩ at VGS=10V and 9mΩ at VGS=4.5V. It is housed in a compact TSDSON-8 package with dimensions of 3.3mm x 3.3mm x 1.1mm.
Feature Summary
- Dual configuration integrates two independent N-channel transistors into a single component for space-efficient circuit design.
- OptiMOS technology delivers low conduction losses through minimized on-resistance characteristics.
- Logic-level gate drive capability enables efficient control using standard logic voltage levels.
Applications
- Power distribution modules requiring compact dual-switch solutions
- DC-DC converter topologies utilizing synchronous rectification
- Motor driver circuits for low-voltage applications
Procurement Notes
Verify the specific suffix XTMA2 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure the part number matches the exact datasheet revision required for your design. Cross-reference the ordering code with authorized distributors to guarantee authenticity and traceability before finalizing procurement.
Selection Notes
Select this component when a dual N-channel configuration is necessary within a minimal footprint. The 30V rating suits low-voltage systems, while the 19A continuous current capacity supports moderate power loads. Evaluate thermal management requirements based on the specified RthJA and RthJC values for the TSDSON-8 package.
Part Context
This component belongs to the Infineon BSZ series of OptiMOS power transistors. These devices are engineered for high efficiency and reliability in power switching applications. The series emphasizes low on-resistance and robust performance across industrial and consumer electronics environments.
Replacement Considerations
Consult official cross-reference tools for verified substitutes. Ensure any replacement maintains identical pinout, voltage ratings, and thermal characteristics to avoid redesigning the PCB layout or thermal solution.
