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Product Detailed Parameters
- Description：MOSFET N-CH 30V 19A/40A TSDSON
- Series：OptiMOS™ 5
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：19A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：26 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1700 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8 FL
- Package / Case：8-PowerTDFN
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Overview
The BSZ0909LSATMA1 is an OptiMOS™ 5 N-channel power MOSFET with a 30 V drain-source voltage rating. It features a maximum on-resistance of 3.0 mΩ at VGS=10V and 3.5 mΩ at VGS=4.5V, supporting a continuous drain current of 40 A. The device utilizes a PG-TSDSON-8 FL surface-mount package. Key electrical parameters include a gate threshold voltage range of 1.2 V to 2 V, total gate charge of 13 nC at VGS=4.5V, and a thermal resistance junction-to-case of 2.6 K/W.
Feature Summary
- Optimized for low on-resistance at logic-level gate drive voltages
- Superior thermal resistance characteristics
- Qualified according to JEDEC standards
Applications
- USB-PD chargers
- Wireless charging systems
- Adapter designs
Procurement Notes
Verify the component authenticity by checking the marking code '0909LS' against the datasheet specifications. Confirm the package type matches the PG-TSDSON-8 FL outline dimensions. Ensure the ordering suffix aligns with the required tape-and-reel configuration if applicable. Cross-reference the revision history to confirm the document version corresponds to the manufactured batch.
Selection Notes
Select this component when designing circuits requiring high efficiency in compact form factors. The low RDS(on) at 4.5V makes it suitable for logic-level control applications. Evaluate the thermal performance based on the specified junction-to-case resistance and PCB cooling area requirements. Consider the avalanche energy rating for transient protection needs.
Part Context
This part belongs to the Infineon OptiMOS™ 5 family, designed for low-voltage power switching applications. The technology focuses on minimizing conduction losses while maintaining robust switching performance. The specific model targets consumer electronics power management where space constraints and thermal efficiency are critical design parameters.
Replacement Considerations
Consult official replacement lists or cross-reference guides provided by Infineon Technologies. Verify that any substitute component meets the same voltage, current, and thermal specifications. Ensure pin compatibility and package dimensions match the existing PCB layout before implementation.
