BSZ096N10LS5ATMA1

Overview

The BSZ096N10LS5 is an N-channel, logic-level OptiMOS™5 power transistor with a drain-source voltage of 100 V. It features a maximum on-state resistance of 9.6 mΩ at VGS=10 V and ID=20 A, supporting a continuous drain current of 62 A at TC=25 °C. The device operates within a junction temperature range of -55 °C to +150 °C and utilizes a PG-TSDSON-8 FL (S3O8) package.

Feature Summary

• Optimized technology for high-frequency switching applications
• Excellent gate charge x RDS(on) figure of merit
• Logic level operation suitable for DC/DC converters
• 100% avalanche tested for ruggedness

Applications

• High frequency switching circuits
• DC/DC converter designs

Procurement Notes

Verify the specific ordering code matches the required package variant. Confirm RoHS compliance and halogen-free status against project specifications. Ensure thermal management aligns with the specified RthJA values for the target PCB footprint. Validate that the component meets JEDEC qualification standards for the intended application environment.

Selection Notes

Select this component when low conduction losses and fast switching speeds are critical. The logic level threshold simplifies gate drive requirements. Consider the thermal resistance characteristics for PCB layout optimization. Evaluate the avalanche energy rating if inductive load protection is required without external snubbers.

Part Context

This part belongs to the OptiMOS™5 family from Infineon Technologies, designed for efficient power conversion. It represents a generation of silicon MOSFETs optimized for low gate charge and high reliability. The TSDSON-8 package provides a compact solution for surface mount assembly in space-constrained electronic designs.

Replacement Considerations

Cross-reference tools should be used to identify compatible alternatives. Verify pinout compatibility and electrical parameter equivalence before substitution. Check for any differences in package dimensions or thermal characteristics.