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Product Detailed Parameters
- Description：MOSFET N-CH 100V 8A/40A TSDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：8A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：9.7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3.8V @ 36µA
- Gate Charge (Qg) (Max) @ Vgs：28 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2080 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：2.1W (Ta), 69W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TSDSON-8-FL
- Package / Case：8-PowerTDFN
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Overview
The BSZ097N10NS5ATMA1 is an N-channel enhancement mode MOSFET from Infineon Technologies, belonging to the OptiMOS 5 product family. It features a TDSON-8 surface-mount package and is designed for high-efficiency power switching applications. The device supports a maximum drain-source voltage of 100 V and a continuous drain current of 100 A at 25°C. Key electrical parameters include a maximum on-resistance of 9.7 mΩ at 10 V gate drive, a typical total gate charge of 36 nC, and a maximum power dissipation of 140 W. It operates within a junction temperature range of -55°C to +175°C.
Feature Summary
- OptiMOS 5 technology provides low conduction losses and optimized dynamic performance.
- Enhanced thermal design enables efficient heat dissipation in compact packages.
- Robust avalanche capability ensures reliability under transient overload conditions.
Applications
- Synchronous rectification in DC/DC converters
- High-side and low-side switching in motor drivers
- Power management units for industrial equipment
Procurement Notes
Verify the complete ordering part number including suffixes such as ATMA1 against official Infineon documentation to ensure correct tape-and-reel packaging specifications. Confirm RoHS compliance status and material declarations via the manufacturer's data sheet before procurement. Cross-reference with authorized distributors to validate authenticity and traceability.
Selection Notes
Select this component when a 100 V rating and 100 A current capacity are required in a TDSON-8 footprint. Compare the 9.7 mΩ on-resistance against system loss requirements. Ensure the gate drive voltage supports the specified Rds(on) characteristics. Evaluate thermal resistance values for PCB layout constraints.
Part Context
This part belongs to the BSC035N10NS5 series family, which utilizes Infineon's OptiMOS 5 technology. The series is characterized by low on-resistance and fast switching speeds suitable for modern power electronics. The TDSON-8 package offers a balance between current handling capability and board space efficiency.
Replacement Considerations
Direct replacements within the same family include BSC035N10NS5ATMA1 and BSC027N10NS5ATMA1. Verify pin compatibility and thermal characteristics when substituting. Check datasheet updates for any changes in electrical limits or package dimensions.
