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The BSZ0994NSATMA1 is an N-channel power MOSFET from Infineon Technologies, utilizing OptiMOS technology. It features a 30V drain-source voltage rating and a continuous drain current of 8.5A at 25°C, with a maximum pulsed current capability of 52A. The device offers a low on-resistance of 9mΩ at 4.5V gate drive. Packaged in an 8-pin TDSON (PQFN 3.3x3.3) format, it supports operation between -55°C and +150°C junction temperature.
Verify the specific suffix ATMA1 to confirm tape-and-reel packaging and lead-free composition. Ensure the ordering part number matches the required package variant exactly. Cross-reference the manufacturer's latest datasheet revision to confirm electrical characteristics and thermal parameters before finalizing procurement specifications.
Select this component for designs requiring low RDS(on) at logic-level gate voltages. The PQFN 3.3x3.3 package provides compact footprint and efficient thermal dissipation. Evaluate the avalanche energy rating of 16mJ against circuit inductive load requirements to ensure robustness during transient events.
This part belongs to Infineon's OptiMOS portfolio, designed for high-efficiency power management. The BSZ0994NSATMA1 specifically targets low-voltage applications where minimizing conduction losses is critical. Its integration into the TDSON family allows for automated surface-mount assembly while maintaining high thermal performance.
Consult official substitution lists for direct replacements. Verify pinout compatibility and thermal resistance values when considering alternative manufacturers or different series within the same vendor catalog.