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Product Detailed Parameters
- Description：MOSFET N-CH 60V 46A TSDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：9.9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 14µA
- Gate Charge (Qg) (Max) @ Vgs：3.1 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1300 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：36W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TSDSON-8-FL
- Package / Case：8-PowerTDFN
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Overview
The BSZ099N06LS5ATMA1 is an N-channel OptiMOS power transistor with a 60 V drain-source voltage rating. It features a maximum on-state resistance of 9.9 mΩ at VGS=10 V and ID=20 A, supporting a continuous drain current of 46 A at TC=25 °C. The device utilizes a PG-TSDSON-8 FL (S3O8) package with fused leads for enhanced thermal performance. Key dynamic parameters include a total gate charge of 8.6 nC and an output charge of 13 nC. It is qualified according to JEDEC standards and includes 100% avalanche testing.
Feature Summary
- Optimized for high-performance synchronous rectification in SMPS applications
- Superior thermal resistance with monolithic integrated Schottky-like diode
- 100% avalanche tested for robustness
- Qualified according to JEDEC standards for target applications
Applications
- High-performance synchronous rectification in switch-mode power supplies
- Low voltage DC/DC converters
- Power management systems requiring high efficiency
Procurement Notes
Verify the specific ordering suffix ATMA1 against the manufacturer's official documentation to confirm packaging details and tape-and-reel specifications. Ensure compatibility with the PG-TSDSON-8 FL footprint during PCB layout. Confirm that the component meets RoHS compliance and halogen-free requirements as stated in the datasheet before final procurement approval.
Selection Notes
Select this component for applications requiring low conduction losses and high thermal efficiency in compact designs. The logic-level gate drive capability allows for direct interfacing with standard control ICs. Consider the thermal resistance values when designing heat dissipation strategies, particularly for high-current operations above 25 °C case temperature.
Part Context
This part belongs to Infineon's OptiMOS family, specifically designed for low-voltage, high-current applications. The BSZ099N06LS5 variant focuses on optimizing the trade-off between on-resistance and gate charge for efficient power conversion. It is manufactured using silicon technology and is intended for surface-mount assembly.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Ensure any replacement matches the 60 V rating, TSDSON-8 package dimensions, and thermal characteristics. Verify that alternative parts meet the same JEDEC qualification and avalanche testing standards.
