BSZ100N03MSGATMA1

$0.35

Description：MOSFET N-CH 30V 10A/40A 8TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:e9d19986583d Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 10A/40A 8TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：10A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：9.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：23 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1700 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta), 30W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSDSON-8
Package / Case：8-PowerTDFN

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BSZ100N03MSGATMA1

Overview

The BSZ100N03MSGATMA1 is a single N-channel enhancement mode MOSFET from Infineon Technologies' OptiMOS 3M series. It utilizes silicon technology and is housed in a TSDSON-8 surface-mount package. The device features a drain-source breakdown voltage of 30 V and supports a continuous drain current of 40 A at 25°C. Its maximum on-resistance is specified at 7.3 mOhms, with a gate charge of 23 nC. The component operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 30 W.

Feature Summary

OptiMOS 3M technology provides optimized performance for low-voltage switching applications.
Logic-level gate threshold enables efficient drive compatibility with standard logic interfaces.
TSDSON-8 package design facilitates compact surface-mount integration.

Applications

Low-side switching in automotive electronics
Power management circuits requiring high efficiency
DC-DC converter topologies

Procurement Notes

Verify the complete part number including suffixes against official manufacturer documentation to ensure correct configuration. Confirm RoHS compliance status through the specific product qualification report. Cross-reference datasheet revisions to validate electrical parameters before finalizing procurement specifications.

Selection Notes

Select this component when a 30 V N-channel MOSFET with low on-resistance is required in a compact TSDSON-8 footprint. Ensure the application current does not exceed the 40 A continuous limit and that thermal management accommodates the 30 W power dissipation capability under operating conditions.

Part Context

This part belongs to the OptiMOS 3M family, designed for general-purpose power switching. It shares the TSDSON-8 form factor with other devices in the series but differs in voltage and current ratings. The 'GATMA1' suffix indicates specific tape-and-reel packaging configurations used by the manufacturer.