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Product Detailed Parameters
- Description：MOSFET N-CH 80V 40A TSDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：11mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3.8V @ 22µA
- Gate Charge (Qg) (Max) @ Vgs：18.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1300 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：50W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TSDSON-8-FL
- Package / Case：8-PowerTDFN
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Overview
The BSZ110N08NS5ATMA1 is an N-channel Power MOSFET from Infineon's OptiMOS 5 family, designed for high-frequency switching and synchronous rectification. It features a maximum drain-source voltage of 80 V and a typical on-resistance of 11 mΩ at 10 V gate drive. The device supports a continuous drain current of 40 A and a pulsed current of 160 A at 25°C. Key electrical parameters include a total power dissipation of 50 W, a typical gate charge of 15 nC, and input capacitance of 1000 pF. Thermal resistance junction-to-case is 2.5 K/W, with a junction-to-ambient rating of 60 K/W. It operates within a temperature range of -55°C to 150°C in an 8-pin PQFN 3.3 x 3.3 mm package.
Feature Summary
- Optimized for high-frequency switching applications
- Integrated body diode suitable for synchronous rectification
- Low gate charge for efficient driver performance
Applications
- High-frequency DC-DC converters
- Synchronous rectification stages
- Point-of-load regulation modules
Procurement Notes
Verify the complete part number including the ATMA1 suffix against official Infineon documentation to ensure correct tape-and-reel packaging specifications. Confirm that the PQFN 3.3x3.3mm footprint matches your PCB layout requirements. Cross-reference thermal resistance values with your specific copper area design to validate heat dissipation capabilities under intended operating conditions.
Selection Notes
Select this component when an 80V rating and low RDS(on) are required in a compact surface-mount form factor. The OptiMOS 5 technology provides a balance between conduction losses and switching speed. Ensure the application environment stays within the specified -55°C to 150°C junction temperature limits and that the gate drive voltage aligns with the 10V test conditions for optimal on-resistance performance.
Part Context
This device belongs to the BSZ series of N-channel enhancement mode MOSFETs manufactured by Infineon Technologies. It utilizes silicon planar technology and is part of the broader OptiMOS product portfolio aimed at improving efficiency in power conversion systems. The specific model designation indicates its voltage class and package type within the manufacturer's catalog structure.
Replacement Considerations
Consult official Infineon cross-reference tools for verified substitutes. Potential alternatives may include other OptiMOS 5 devices with similar 80V ratings and PQFN packages, provided electrical parameters such as RDS(on), Qg, and thermal characteristics meet or exceed the original specifications.
