BSZ120P03NS3EGATMA1

Description：MOSFET P-CH 30V 11A/40A 8TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:908e7e67b103 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 11A/40A 8TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：11A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：12mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3.1V @ 73µA
Gate Charge (Qg) (Max) @ Vgs：45 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：3360 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta), 52W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSDSON-8
Package / Case：8-PowerTDFN

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BSZ120P03NS3EGATMA1

Overview

The BSZ120P03NS3EGATMA1 is a single P-Channel OptiMOS P3 power transistor in a PG-TSDSON-8 package. It features a drain-source breakdown voltage of -30 V and a continuous drain current of -40 A at Tc=25 °C. The maximum on-state resistance is 12 mΩ at VGS=-10 V and -9 mΩ at VGS=-6 V. Gate-source voltage is rated at ±25 V, with a gate threshold voltage typically between -1.9 V and -3.1 V. Total power dissipation reaches 73 W at Ta=25 °C, supported by a thermal resistance junction-to-case of 2.4 K/W.

Feature Summary

Optimized for notebook applications with a 25 V gate-source rating
Qualified according to JEDEC standards for target applications
Halogen-free construction compliant with IEC61249-2-21

Applications

Battery management systems
Load switching circuits

Procurement Notes

Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure the component meets RoHS compliance requirements and matches the exact PG-TSDSON-8 marking code. Cross-reference datasheet revision 2.1 for accurate electrical parameters before finalizing procurement orders.

Selection Notes

Select this component for low-side switching applications requiring high efficiency and compact footprint. The device supports operating temperatures up to 150 °C, making it suitable for thermally constrained environments. Evaluate the thermal resistance characteristics and safe operating area curves to ensure adequate heat dissipation under expected load conditions.

Part Context

This part belongs to the OptiMOS P3 family of p-channel power transistors manufactured by Infineon Technologies. The series is designed to provide improved performance over previous generations, focusing on reduced on-resistance and optimized gate charge characteristics for modern portable electronics and power management solutions.