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Product Detailed Parameters
- Description：MOSFET N-CH 80V 10A/40A 8TSDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：10A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：12.3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 33µA
- Gate Charge (Qg) (Max) @ Vgs：25 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1700 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：2.1W (Ta), 66W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TSDSON-8
- Package / Case：8-PowerVDFN
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Overview
The BSZ123N08NS3GATMA1 is a single N-channel Power MOSFET from the Infineon OptiMOS 3 family, housed in a TSDSON-8 surface-mount package. It features an 80V drain-source breakdown voltage and supports a continuous drain current of 40A at 25°C. The device exhibits a maximum on-resistance of 10.3 milliohms at a gate-source voltage of 10V. Key switching parameters include a total gate charge of 25 nanocoulombs, with rise and fall times of 18ns and 4ns respectively. It operates within a temperature range of -55°C to +150°C and handles up to 66W of power dissipation.
Feature Summary
- OptiMOS 3 technology provides optimized low on-resistance for high efficiency.
- TSDSON-8 package enables compact footprint and efficient thermal management.
- Enhanced avalanche ruggedness supports robust operation under transient conditions.
Applications
- Synchronous rectification in DC/DC converters
- High-side and low-side switching in motor control circuits
- Power management modules for industrial equipment
Procurement Notes
Verify the complete ordering part number against official Infineon documentation to ensure correct suffix alignment. Confirm that the specific tape-and-reel packaging matches production requirements. Cross-reference RoHS compliance status using the manufacturer's latest declaration. Validate component authenticity through authorized distribution channels only.
Selection Notes
Select this component when an 80V rating and 40A continuous current capacity are required in a small form factor. The low 10.3 milliohm on-resistance makes it suitable for applications prioritizing conduction loss reduction. Ensure the driving circuit can handle the 25 nanocoulomb gate charge for optimal switching performance.
Part Context
This component belongs to the OptiMOS 3 series, designed for general-purpose power switching applications. It utilizes silicon technology to deliver reliable performance in automotive and industrial environments. The TSDSON-8 package offers improved thermal characteristics compared to traditional SO-8 variants while maintaining compatibility with standard surface-mount assembly processes.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Direct replacements must match the 80V rating, 40A current capability, and TSDSON-8 package dimensions. Verify pinout compatibility before implementation.
