BSZ12DN20NS3GATMA1

$1.64

Description：MOSFET N-CH 200V 11.3A 8TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:e98a88ca3fdb Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 200V 11.3A 8TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：11.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：125mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id：4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs：8.7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：680 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：50W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSDSON-8
Package / Case：8-PowerTDFN

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BSZ12DN20NS3GATMA1

Overview

BSZ12DN20NS3GATMA1 is an N-channel enhancement-mode power MOSFET from the OptiMOS 3 series. It features a PG-TSDSON-8 surface-mount package with 8 pins. The device supports a maximum drain-source voltage of 200 V and a continuous drain current of 11.3 A at 25 °C. Maximum on-resistance is 125 mΩ, with typical gate charge of 6.5 nC at 10 V. Power dissipation reaches 50 W at 25 °C case temperature. Operating junction temperature ranges from -55 °C to +150 °C.

Feature Summary

Optimized for DC-DC conversion applications
Low on-resistance R DS(on) combined with excellent gate charge product
Qualified according to JEDEC standards for target applications

Applications

DC-DC converters
Power switching circuits
General-purpose power transistor applications

Procurement Notes

Verify component authenticity by matching the marking code '12DN20N' against official Infineon documentation. Confirm the package type is PG-TSDSON-8 and check RoHS compliance status. Ensure the datasheet revision matches the specific batch requirements before finalizing procurement orders.

Selection Notes

Select this component when a 200 V rating and low conduction losses are required in a compact surface-mount form factor. Consider the thermal resistance characteristics and safe operating area limits for high-current switching scenarios. Evaluate the gate charge specifications against driver capabilities to ensure efficient switching performance.

Part Context

The BSZ12DN20NS3GATMA1 belongs to the OptiMOS 3 family of silicon power transistors manufactured by Infineon Technologies. This series utilizes advanced trench technology to achieve superior figure-of-merit values compared to previous generations. The part is designed specifically for high-efficiency power management solutions requiring robust avalanche energy handling.