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Product Detailed Parameters
- Description：MOSFET N-CH 30V 9A/35A 8TSDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：9A (Ta), 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：11.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：17 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1300 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.1W (Ta), 25W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TSDSON-8
- Package / Case：8-PowerTDFN
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Overview
The BSZ130N03MSGATMA1 is an N-channel enhancement mode power MOSFET from Infineon's OptiMOS 3M series. It features a TDSON-8 surface-mount package with silicon technology. Key electrical parameters include a drain-source voltage (Vds) of 30 V and a continuous drain current (Id) of 35 A at 25°C. The device exhibits a maximum on-state resistance (Rds(on)) of 12.4 mΩ at Vgs = 10 V. Gate characteristics specify a threshold voltage range of 1 V to 2 V and a typical gate charge of 13 nC. Thermal performance includes a maximum power dissipation of 25 W and an operating temperature range from -55°C to +150°C.
Feature Summary
- OptiMOS 3M technology provides optimized low on-resistance for high efficiency in low-voltage applications.
- Logic level compatible gate structure enables direct drive from standard logic interfaces.
- TDSON-8 package design facilitates efficient thermal management and compact PCB integration.
Applications
- Low-side switching in DC-DC converter circuits
- Load switching for automotive electronic control units
- Power distribution modules in industrial equipment
Procurement Notes
Verify the component status before procurement as the BSZ130N03MSGATMA1 is listed with an End-of-Life or Not Recommended for New Design status by the manufacturer. Confirm availability through authorized distributors and ensure that the specific ordering suffix matches the required tape-and-reel packaging configuration. Cross-reference datasheet revisions to guarantee parameter consistency with existing designs.
Selection Notes
Select this component when a 30 V N-channel MOSFET with moderate current handling capability is required in a TDSON-8 footprint. Compare Rds(on) values against alternative packages to evaluate conduction losses. Ensure the gate charge specifications align with the driving circuit's switching frequency requirements. Verify that the thermal resistance parameters support the intended heat dissipation environment without excessive junction temperature rise.
Part Context
This part belongs to Infineon's OptiMOS 3 family, which targets low-voltage power switching applications. The OptiMOS 3M variant specifically refines the trench gate technology for improved figure-of-merit metrics compared to previous generations. The TDSON-8 package offers a balance between current capacity and board space efficiency, positioning it within the broader portfolio of surface-mount power transistors designed for modern electronics.
Replacement Considerations
Check for direct pin-compatible substitutes within the same OptiMOS 3 series, such as variants with different current ratings like the BSC030N03MSGATMA1. Verify that any replacement maintains identical package dimensions and thermal characteristics to avoid mechanical redesigns.
