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Product Detailed Parameters
- Description：MOSFET N-CH 100V 40A TSDSON
- Series：OptiMOS™ 5
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：14.6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 23µA
- Gate Charge (Qg) (Max) @ Vgs：3.2 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1300 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：52W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TSDSON-8-FL
- Package / Case：8-PowerTDFN
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Overview
The BSZ146N10LS5ATMA1 is a single N-channel power MOSFET from Infineon’s OptiMOS 5 family, designed for high-efficiency switching applications. It features a maximum drain-source voltage (Vds) of 100 V and a continuous drain current (Id) of 40 A at case temperature. The device exhibits a low on-resistance (Rds(on)) of 14.6 mΩ, enabling reduced conduction losses. Packaged in an 8-pin PG-TSDSON-FL surface-mount footprint, it supports operation within a junction temperature range of -55°C to +175°C. Key electrical characteristics include a gate charge (Qg) of 23 nC and threshold voltage (Vgs(th)) of 2.3 V, optimized for fast switching performance.
Feature Summary
- OptiMOS 5 technology delivers enhanced efficiency through minimized on-resistance and optimized gate charge characteristics.
- Robust thermal management capabilities support high-power density designs with a maximum junction temperature rating of 175°C.
- Compact PG-TSDSON-8-FL package facilitates automated surface-mount assembly while maintaining reliable electrical connections.
Applications
- Synchronous rectification in DC/DC converter modules
- High-side and low-side switching in motor control circuits
- Power distribution units and load switches
Procurement Notes
Verify the complete part number including suffixes against official Infineon documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and REACH SVHC declarations prior to integration. Cross-reference datasheet revisions to validate parameter consistency. Ensure ordering quantities align with manufacturer minimums and standard reel sizes.
Selection Notes
Select this component when a 100 V N-channel MOSFET with low Rds(on) and compact SMD packaging is required. Consider the 40 A current rating and 14.6 mΩ resistance for efficiency-critical designs. Evaluate thermal dissipation requirements based on the TSDSON-8 package and intended operating environment. Compare gate charge values against driver capabilities for optimal switching speed.
Part Context
This device belongs to Infineon’s OptiMOS 5 series, which focuses on improving power conversion efficiency in automotive and industrial applications. The BSZ146N10LS5 variant specifically targets 100 V systems requiring moderate current handling in space-constrained PCB layouts. It complements other members of the BSC and BSZ families by offering a balance between conductivity and switching speed.
Replacement Considerations
Direct substitutes may include other OptiMOS 5 devices with similar voltage and current ratings, such as BSZ065N06LS5 or BSC096N10LS5, provided pin compatibility and electrical parameters meet design requirements. Verify package dimensions and thermal pad configurations before substitution.
