BSZ160N10NS3GATMA1

$1.37

Description：MOSFET N-CH 100V 8A/40A 8TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:63c7ded29b60 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 8A/40A 8TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：8A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：16mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3.5V @ 12µA
Gate Charge (Qg) (Max) @ Vgs：25 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1700 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta), 63W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSDSON-8
Package / Case：8-PowerTDFN

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BSZ160N10NS3GATMA1

Overview

The BSZ160N10NS3GATMA1 is an N-channel OptiMOS™ 3 power transistor with a 100 V drain-source voltage rating. It provides a continuous drain current of 40 A at 25 °C case temperature and supports pulsed currents up to 160 A. The device features a maximum on-state resistance of 16 mΩ at VGS=10 V and ID=20 A, with a typical gate charge of 19 nC. Packaged in PG-TSDSON-8, it operates within a junction temperature range of -55 °C to +150 °C.

Feature Summary

Optimized for high-frequency switching applications
Excellent figure of merit combining gate charge and on-state resistance
100% avalanche tested for robustness

Applications

DC/DC converters
High frequency switching circuits

Procurement Notes

Verify the specific ordering suffix matches the required tape-and-reel packaging configuration. Confirm that the component meets RoHS compliance standards and halogen-free requirements as specified by IEC61249-2-21. Ensure the procurement channel sources genuine Infineon Technologies products to guarantee adherence to JEDEC qualification standards.

Selection Notes

Select this component when low conduction losses are critical due to its optimized RDS(on) characteristics. Consider the PG-TSDSON-8 package dimensions for PCB layout constraints. Evaluate thermal management requirements based on the specified thermal resistance values to ensure operation remains within the safe operating area under varying load conditions.

Part Context

This part belongs to the OptiMOS™ 3 family from Infineon Technologies, designed for power management and multimarket applications. It utilizes silicon technology to deliver high reliability and efficiency in compact surface-mount configurations suitable for modern electronic designs requiring robust performance.