BSZ16DN25NS3GATMA1

$1.84

Description：MOSFET N-CH 250V 10.9A 8TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:2b3f5d128ac0 Category: Single FETs, MOSFETs Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 250V 10.9A 8TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：250 V
Current - Continuous Drain (Id) @ 25°C：10.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：165mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id：4V @ 32µA
Gate Charge (Qg) (Max) @ Vgs：11.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：920 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：62.5W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSDSON-8
Package / Case：8-PowerTDFN

Download product information

BSZ16DN25NS3GATMA1

Overview

The BSZ16DN25NS3GATMA1 is an N-channel enhancement mode MOSFET from the OptiMOS 3 series, housed in a PG-TSDSON-8 surface-mount package. It features a maximum drain-source voltage of 250 V and a continuous drain current of 10.9 A at 25 °C case temperature. The device exhibits a typical on-resistance of 146 mΩ and a total gate charge of 8.6 nC. Thermal performance includes a junction-to-case resistance of 2 K/W, supporting operation up to 150 °C.

Feature Summary

Optimized for DC-DC conversion applications
Low on-resistance with excellent gate charge product
Qualified according to JEDEC standards

Applications

DC-DC converters
Power switching circuits
General power management systems

Procurement Notes

Verify the exact ordering suffix against official Infineon documentation to ensure correct packaging and reel specifications. Confirm RoHS compliance and halogen-free status requirements match project constraints. Cross-reference datasheet revision numbers to validate electrical parameters before finalizing component selection.

Selection Notes

Select this component when high-voltage isolation and low conduction losses are required in compact designs. Evaluate thermal dissipation capabilities based on PCB copper area and ambient conditions. Ensure gate drive voltages remain within the specified ±20 V limit to prevent dielectric breakdown.

Part Context

This part belongs to the OptiMOS 3 family, designed for efficient power switching. It utilizes silicon technology to deliver robust performance in surface-mount configurations. The PG-TSDSON-8 package provides a balance between thermal conductivity and board space efficiency.